| Item # | CWL | 10 dB Tuning | Typ. Power |
|---|---|---|---|
| TLK-L780M | 770 nm | 30 nm | 50 mW |
| TLK-L1050M | 1050 nm | 60 nm | 8 mW |
| TLK-L1220R | 1220 nm | 90 nm | 40 mW |
| TLK-L1300M | 1310 nm | 100 nm | 45 mW |
| TLK-L1300R | 1310 nm | 100 nm | 50 mW |
| TLK-L1550M | 1550 nm | 120 nm | 35 mW |
| TLK-L1550R | 1550 nm | 120 nm | 40 mW |
| TLK-L1900M | 1900 nm | 120 nm | 7 mW |
| TLK-L1950R | 1950 nm | 120 nm | 7 mW |
Thorlabs’ line of Tunable Laser Kits is designed for superior cavity construction flexibility and high-stability performance. Available in either a Littrow or Littman configuration, these external cavity laser (ECL) kits are complete systems that only require drive electronics to operate (LD and TEC controllers). They are ideal for education, component testing, and research due to their modularity. Components are offered to convert the laser between Littman and Littrow configurations as well as to create a tunable laser at a non-standard wavelength. Various gain chips, cavity optics, and tuning actuators are available to provide customizable ECL solutions. Additionally, customer-furnished ECL components can be easily integrated, which minimizes construction time and cost compared to other tunable laser alternatives.

Please contact our technical support department for information on custom Tunable Laser Kit configurations. Please note that the free-space beam of the
TLK-L780M does not propagate along the hole matrix on a table unless it is used with the TLK-E enclosure and two TLK-SM-1 steering mirrors. For a printable overview of our Tunable Laser Kits, please see our Information Sheet from OFC 2011.
| Item # | TLK-L780M | ||
|---|---|---|---|
| Min | Typ | Max | |
| Center Wavelength | 760 nm | 770 nm | 780 nm |
| Tuning Range (10 dB) | 15 nm | 30 nm | - |
| Peak Power | 15 mW | 50 mW | - |
| Wavelength Tuning Resolution | 2 pm | - | - |
| Tuning Speed (with Z812) | - | - | 17 nm/s |
| Linewidth | - | 100 kHz | 130 kHz |
| Side Mode Supression Ratio | 30 dB | 17 dB | - |
| Polarization Extinction Ratio | - | N/A | - |
| Power Stability (30 s)* | 1% | - | - |
| Power Stability (24 hr)* | 10% | ||
| Wavelength Stability (30 s)* | - | - | 4 pm |
| Wavelength Stability (24 hr)* | - | - | 50 pm |
*Measurements taken with laser operating in open loop.
| Item # | TLK-L1050M | ||
|---|---|---|---|
| Min | Typ | Max | |
| Center Wavelength | 1040 nm | 1050 nm | 1060 nm |
| Tuning Range (10 dB) | 45 nm | 60 nm | - |
| Peak Power | 5 mW | 8 mW | - |
| Wavelength Tuning Resolution | 2 pm | - | - |
| Tuning Speed (with Z812) | - | - | 23 nm/s |
| Linewidth | - | 100 kHz | 130 kHz |
| Side Mode Supression Ratio | 30 dB | 45 dB | - |
| Polarization Extinction Ratio | - | N/A | - |
| Power Stability (30 s)* | 1% | - | - |
| Power Stability (24 hr)* | 10% | - | - |
| Wavelength Stability (30 s)* | - | - | 4 pm |
| Wavelength Stability (24 hr)* | - | - | 50 pm |
*Measurements taken with laser operating in open loop.
| Item # | TLK-L1220R | ||
|---|---|---|---|
| Min | Typ | Max | |
| Center Wavelength | 1200 nm | 1220 nm | 1240 nm |
| Tuning Range (10 dB) | 80 nm | 90 nm | - |
| Peak Power | 30 mW | 40 mW | - |
| Wavelength Tuning Resolution | 2.5 pm | - | - |
| Tuning Speed (with Z812) | - | - | 25 nm/s |
| Linewidth | - | 100 kHz | 130 kHz |
| Side Mode Supression Ratio | 30 dB | 45 dB | - |
| Polarization Extinction Ratio | - | N/A | - |
| Power Stability (30 s)* | 1% | - | - |
| Power Stability (24 hr)* | 10% | - | - |
| Wavelength Stability (30 s)* | - | - | 4 pm |
| Wavelength Stability (24 hr)* | - | - | 50 pm |
*Measurements taken with laser operating in open loop.
| Item # | TLK-L1300M | TLK-L1300R | ||||
|---|---|---|---|---|---|---|
| Min | Typ | Max | Min | Typ | Max | |
| Center Wavelength | 1290 nm | 1310 nm | 1320 nm | 1290 nm | 1310 nm | 1320 nm |
| Tuning Range (10 dB) | 80 nm | 100 nm | - | 80 nm | 100 nm | - |
| Peak Power | 20 mW | 45 mW | - | 30 mW | 50 mW | - |
| Wavelength Tuning Resolution | 2.5 pm | - | - | 2 pm | - | - |
| Tuning Speed (with Z812) | - | - | 29 nm/s | - | - | 20 nm/s |
| Linewidth | - | 100 kHz | 130 kHz | - | 100 kHz | 130 kHz |
| Side Mode Supression Ratio | 30 dB | 45 dB | - | 30 dB | 45 dB | - |
| Polarization Extinction Ratio | - | N/A | - | - | N/A | - |
| Power Stability (30 s)* | 1% | - | - | 1% | - | - |
| Power Stability (24 hr)* | 10% | 10% | - | - | ||
| Wavelength Stability (30 s)* | - | - | 4 pm | - | - | 4 pm |
| Wavelength Stability (24 hr)* | - | - | 50 pm | - | - | 50 pm |
*Measurements taken with laser operating in open loop.
| Item # | TLK-L1550M | TLK-L1550R | ||||
|---|---|---|---|---|---|---|
| Min | Typ | Max | Min | Typ | Max | |
| Center Wavelength | 1530 nm | 1550 nm | 1570 nm | 1530 nm | 1550 nm | 1570 nm |
| Tuning Range (10 dB) | 70 nm | 120 nm | - | 70 nm | 120 nm | - |
| Peak Power | 15 mW | 35 mW | - | 20 mW | 40 mW | - |
| Wavelength Tuning Resolution | 3 pm | - | - | 3 pm | - | - |
| Tuning Speed (with Z812) | - | - | 35 nm/s | - | - | 33 nm/s |
| Linewidth | - | 100 kHz | 130 kHz | - | 100 kHz | 130 kHz |
| Side Mode Supression Ratio | 30 dB | 45 dB | - | 30 dB | 45 dB | - |
| Polarization Extinction Ratio | - | N/A | - | - | N/A | - |
| Power Stability (30 s)* | 1% | - | - | 1% | - | - |
| Power Stability (24 hr)* | 10% | - | - | 10% | - | - |
| Wavelength Stability (30 s)* | - | - | 4 pm | - | - | 4 pm |
| Wavelength Stability (24 hr)* | - | - | 50 pm | - | - | 50 pm |
*Measurements taken with laser operating in open loop.
| Item # | TLK-L1900M | TLK-L1950R | ||||
|---|---|---|---|---|---|---|
| Min | Typ | Max | Min | Typ | Max | |
| Center Wavelength | 1870 nm | 1900 nm | 1930 nm | 1920 nm | 1950 nm | 1970 nm |
| Tuning Range (10 dB) | 90 nm | 120 nm | - | 90 nm | 120 nm | - |
| Peak Power* | 4 mW | 7 mW | - | 4 mW | 7 mW | - |
| Wavelength Tuning Resolution | 4 pm | - | - | 3 pm | - | - |
| Tuning Speed (with Z812) | - | - | 45 nm/s | - | - | 32 nm/s |
| Linewidth | - | 100 kHz | 130 kHz | - | 100 kHz | 130 kHz |
| Side Mode Supression Ratio | 30 dB | 45 dB | - | 30 dB | 45 dB | - |
| Polarization Extinction Ratio | - | N/A | - | - | N/A | - |
| Power Stability (30 s)** | 1% | - | - | 1% | - | - |
| Power Stability (24 hr)** | 10% | - | - | 10% | - | - |
| Wavelength Stability (30 s)** | - | - | 10 pm | - | - | 10 pm |
| Wavelength Stability (24 hr)** | - | - | 100 pm | - | - | 100 pm |
*The TLK-L1900M and TLK-L1950R can be mated to the TDFA-1900 fiber amplifier, which was specifically designed for use with these lasers.
**Measurements taken with laser operating in open loop.
| Pin | Description | Pin | Description | Pin | Description |
|---|---|---|---|---|---|
| 1 | Tied to Pin 5b | 4 | PD Anodec | 7 | NC |
| 2 | PD Cathodec | 5 | Tied to Pin 1b | 8 | LD Anode |
| 3 | LD Cathode | 6 | NC | 9 | NC |
| Pin | Description | Pin | Description | Pin | Description |
|---|---|---|---|---|---|
| 1 | NC | 4 | TEC + | 7 | NC |
| 2 | Thermistor + | 5 | TEC - | 8 | NC |
| 3 | Thermistor - | 6 | NC | 9 | NC |

| Pin | Description | Pin | Description |
|---|---|---|---|
| 1 | Ground (Limit and Vcc) | 8 | NC |
| 2 | Forward Limit | 9 | Ident Resistor |
| 3 | Reverse Limit | 10 | Vcc (5 V DC) |
| 4 | NC | 11 | Encoder Channel A |
| 5 | Motor (-) | 12 | NC |
| 6 | NC | 13 | Encoder Channel B |
| 7 | Motor (+) | 14, 15 | NC |

Above, a TLK-L1900M is pictured with its included DC servo motor controller (TDC001, left) and controller interface (right).
With each Tunable Laser Kit, we include the following:
What you will need:
Suggested tools & accessories:
If you have any questions about what is included with each kit or what is needed to operate a Tunable Laser Kit, please contact Technical Support.
The following tables and images depict the standard components of our Tunable Laser Kits. While the kits are shipped complete, these components are also available separately. This allows for a user to change cavity configurations, support different lasing wavelengths, and minimize downtime of the system should a laser need repair. For a list of the components required to change the cavity configuration or lasing wavelength of a TLK, please see the Conversion Guide tab above.

| Label | Description | Label | Description |
|---|---|---|---|
| A | Tuning Motor Mount | E | Mode Hop Adjuster |
| B | Gain Chip Mounting Plate | F | Collimating Lens |
| C | Half Butterfly Gain Chip | G | Littrow Grating Module |
| D | Collimation Adjuster | H | Tuning Motor |

These are the differentiating components of each Littman Tunable Laser Kit. The Gain Chip, Top Plate, Grating Module, and Collimating Lens are the components you will need to convert from one supported wavelength to the next. If you are converting your Littrow Tunable Laser Kit to a Littman configuration, you will also need to purchase a Littman Mirror Module (TLK-LMM) and a Littman Grating Platform (TLK-LGP).
| Included in Kit Item # | Center Wavelength | Gain Chip | Top Plate | Grating Module | Collimating Lens |
|---|---|---|---|---|---|
| TLK-L780M | 770 nm | TFP780A | TLK-P00 | TLK-G1500M | TLK-352330-B |
| TLK-L1050M | 1050 nm | SAF1171S | TLK-P26 | TLK-G1150M | TLK-352330-B |
| TLK-L1300M | 1310 nm | SAF1174S | TLK-P26 | TLK-G0900M | TLK-352330-C |
| TLK-L1550M | 1550 nm | SAF1550S2 | TLK-P26 | TLK-G0750M | TLK-352330-C |
| TLK-L1900M | 1900 nm | SAF1900S | TLK-P26 | TLK-G0600M | TLK-352330-C |
These are the differentiating components of each Littrow Tunable Laser Kit. The Gain Chip, Top Plate, Grating Module, and Collimating Lens are the components you will need to convert from one supported wavelength to the next. If you are converting from a Littman to a Littrow configuration, you will not need any additional components than the ones listed below.
| Included in Kit Item # | Center Wavelength | Gain Chip | Top Plate | Grating Module | Collimating Lens |
|---|---|---|---|---|---|
| TLK-L1220R | 1220 nm | SAF1175S | TLK-P26 | TLK-G1350R2 | TLK-352330-C |
| TLK-L1300R | 1310 nm | SAF1174S | TLK-P26 | TLK-G1350R | TLK-352330-C |
| TLK-L1550R | 1550 nm | SAF1550S2 | TLK-P26 | TLK-G1050R | TLK-352330-C |
| TLK-L1950R | 1950 nm | SAF1900S | TLK-P26 | TLK-G0900R | TLK-352330-C |
Absorption Spectroscopy is a common application for tunable lasers. This form of spectroscopy is used to determine the molecular content of a gas. By tuning the wavelength of the laser, one can record the absorption lines of the gas and thus discover its composition. These absorption lines occur when the frequency of the laser matches the energy difference of two quantum mechanical states of the gas molecules. Direct Absorption Spectroscopy and Saturated Absorption Spectroscopy are the two most common techniques and are outlined below.
This simplified form of spectroscopy involves aiming a laser beam through a gas cell and monitoring the transmitted intensity while tuning the laser's wavelength. The gas' absorption lines cause a portion of the laser beam's power to be absorbed. Due to Doppler effects, this form of spectroscopy is not great at resolving narrow linewidth absorption features.
This modified form of absorption spectroscopy still uses only one laser source, but is capable of resolving fine absorption features that Direct Absorption Spectroscopy cannot. In order to do this, it reduces Doppler effects by using counter-propagating pump beam and probe beams. The laser beam propagating from the tunable laser is split in to two beams using a beamsplitter. The higher power beam is known as the pump beam. This beam is directed through the gas cell. The second beam is the probe beam. With the use of a few mirrors, it is aligned nearly colinear, but counter-propagating, to the pump beam. Both beams should intersect within the gas cell. This reduces the Doppler effects that were apparent in the Direct Absorption Spectroscopy process above. The intensity of the probe beam is then measured with a photodetector.


| Cavity Design | Littrow | Littman-Metcalf |
|---|---|---|
| High Output Power | x | |
| Wide Tuning Range | x | |
| Narrow Linewidth | x | |
| Stationary 0th Order Beam | x |
Lasers consist of an active gain element and optical feedback to this gain element. The most common diode lasers are based on a Fabry-Perot design with a linear waveguide and reflective surfaces at both ends of the gain chip to provide feedback. Some Fabry-Perot lasers are constructed for external feedback, but this is rare. Single angle facet (SAF) gain chips, on the other hand, have a curved waveguide with only one internally reflective endface and rely on external optical feedback to produce lasing.
Through the use of an external feedback mechanism, a user is able to tune a laser cavity to sustain a desired wavelength with minimal linewidth. This is highly desirable for many applications, particularly in metrology where precision is essential. Littrow and Littman-Metcalf configurations are the two most common ways to build an External Cavity Laser (ECL). Many other ECL configurations are based on these designs, but typically modify the cavity with additional optical components. Littrow cavities have minimal losses and thus intrinsically offer higher power, while Littman-Metcalf cavities produce a narrower linewidth.
A Littrow cavity provides feedback to the gain element through the use of a grating. One end of the gain element must allow light to exit, such as the design of an SAF. Light emitted from this end is first collimated. A grating then diffracts this collimated beam with the 1st order diffraction coupled back into the gain element, which allows it to support lasing. Wavelength tuning of the laser is possible by altering the angle of the grating relative to the cavity. 0th order diffraction from the grating will exit the laser's cavity at an angle dependent on the grating angle.
Littman-Metcalf configured ECLs use both a grating and a mirror for tuning. Similar to the Littrow configuration, light emitted from the uncoated end of the gain element must first be collimated. This beam is then diffracted by a grating. The 0th order diffraction reflects off of a mirror back on to the grating, where it is diffracted a second time before being coupled back into the gain element. Since light is diffracted twice, losses are higher (power loss), but the side mode suppression ratio (SMSR) is increased to produce a narrower linewidth laser. In this configuration the grating remains stationary, while the mirror is turned to tune the laser cavity's supported wavelength. Unlike with Littrow lasers, the direction of the 0th order free space beam remains stationary, which can be beneficial in some applications.
Many modifications to these cavities can be made to produce a higher polarization extinction ratio (PER) or to improve the SMSR. We always seek to tailor our products to our customers' applications. Please contact Tech Support and let us know what accessories would benefit your application.

Two elements are required for a laser to operate: (1) an active gain medium that amplifies the optical signal and (2) a feedback mechanism to provide sustained laser oscillation. In a Fabry-Perot laser, two mirrors having a reflection coefficient r1 and r2 (power reflectance R1 = r12 and R2 = r22) provide feedback for the optical field, as shown in Figure 1.

Figure 1: Fabry-Perot Laser Structure
The round-trip gain for the optical field within a cavity of length L can be expressed as:

Equation 1: Round-trip Gain for Optical Field
where g and αi are the gain and internal loss coefficients, respectively, λ is the vacuum wavelength, neff is the effective refractive index, and L is the cavity length. Solving for unity results in the threshold amplitude and phase conditions:

Equation 2: The amplitude condition

Equation 3: The phase condition
where αm is defined as the mirror loss and N is a running integer index representing the mode number.
In a semiconductor (diode) laser, the gain medium is excited by injecting a current into the junction region of a forward biased diode. The high concentration of electrons and holes in the engineered quantum-well junction of a semiconductor laser makes it possible to create the population inversion required for optical gain.
When the gain medium is a semiconductor material, a Fabry-Perot cavity can be created by the Fresnel optical reflections at the cleaved facets of the chip. the junction is effectively a waveguide that extends from one facet to the other. An uncoated "as-cleaved" facet perpendicular to the waveguide has a reflectivity of R~30%. However, the maximum output power of the device can be optimized by modifying the reflectance of the facets with optical coatings. Maximum power for a Fabry-Perot laser diode is typically achieved with a high-reflectivity (HR) coating on the back facet and a low-reflectivity (LR) coating on the front facet.
The emission spectrum of the Fabry-Perot laser diode device will be dependent on the injection current. When biased below threshold with g > αi the emission spectrum consists of a broad series of peaks corresponding to the longitudinal modes of the Fabry-Perot cavity defined by the phase equation. Lasing does not occur until the injection current is increased to the point where g = αi + αm. The lasing wavelength is determined by the longitudinal mode that first achieves the threshold condition. The output spectrum does not always collapse into a single lasing wavelength but can consist of a narrow spectrum of longitudinal modes.

Figure 2: Gain Curve of a Fabry-Perot Laser
This is particularly true for InP-based Fabry-Perot lasers, which typically have an optical bandwidth of 5 to 10 nm. GaAs-based devices can operate in a single longitudinal mode, depending on wavelength and output power. they typically have an output bandwidth <2 nm.
A typical 850 nm laser diode with a length of around 300 µm and a group index around 4 will have a longitudinal mode spacing of 0.3 nm, which is similar to a 1 mm long 1550 nm laser diode. Changing the length or refractive index of the cavity, for example by heating or cooling the laser diode, will shift the whole comb of modes and consequently the output wavelength.
The linewidth of a semiconductor laser single longitudinal lasing mode (FWHM) is given by the modified Schawlow and Townes formula that incorporates the Henry linewidth enhancement factor αH:[1]

Equation 4: Schawlow-Townes-Henry Laser Linewidth
where hv is the photon energy, vg is the group velocity, nsp is the population inversion factor, and Pout is the single-facet output power. This equation describes the spectral broadening of the laser linewidth due to phase and amplitude fluctuations caused by the unavoidable addition of spontaneous emission photons to the coherent lasing mode. These so-called quantum noise fluctuations define a lower limit on the laser linewidth, which may be masked by larger noise fluctuations caused by mechanical/acoustic vibration or thermal variation.
Extending the length of the cavity will decrease αm (see Eq. 2), which reduces the linewidth. This can be understood by viewing the quantum noise-limited linewidth (see Eq. 4) as being proportional to the ratio of the number of spontaneous emission photons in the lasing mode. Increasing the cavity length both reduces the number of spontaneous emission photons (by decreasing the "cold-cavity" spectral width of each longitudinal mode) and increases the total number of photons in the cavity for a fixed output power. This is why the cavity length term appears twice in the Schallow-Townes equation.
A single-frequency distributed feedback (DFB) diode laser with cavity of 0.3 mm will typically have an emission linewidth on the order of 1 to 10 MHz. Increasing the length of the cavity to 3 cm, for example, will narrow the emission linewidth by a factor of more than 100. It has been shown [2] that the linewidth of the emission from an extended cavity semiconductor lasers can be reduced to <1 kHz.
For many applications, it is desirable to adjust the lasing wavelength of a single longitudinal mode (single frequency) laser. To accomplish this, a wavelength-selective feedback element external to the semiconductor laser chip can be used to select the lasing wavelength. Proper operation of this external cavity laser (ECL) requires suppression of the intrinsic optical feedback from the semiconductor chip Fabry-Perot cavity so that it does not interfere with the external feedback. The gain chip's Fabry-Perot cavity effect can be reduced by applying an antireflection (AR) optical coating to one chip facet.

Figure 3: External Cavity Operation Based on a Gain Chip
At a minimum, the chip facet reflectance (R1) should be 20 dB less than the external feedback (Rext); that is, R1 < 10-2 x Rext. [3] Even with the AR coating, the residual reflection from the AR-coated Fabry-Perot gain chip facet often limits the stability, output power, and spectral quality of the ECL, especially if the laser is tunable. To further reduce the reflection at the chip facet, the combination of an angled waveguide and an AR coating can be used to effectively remove most of the feedback from the internal chip Fabry-Perot cavity. [4] This single-angled-facet (SAF) gain chip provides a superior structure for ECLs, in particular broadband tunable ECLs.

Figure 4: Single-Angled-Facet Gain Chip
There are numerous approaches for implementing an external cavity semiconductor laser. [3] The first consideration for most approaches is the choice of a wavelength selective feedback element. One of the most common feedback elements is a diffraction grating, which can be used as the feedback element in both single-frequency and broadly tunable external cavity lasers.
When the collimated output of the gain chip is incident on a diffraction grating at angle θ with respect to the grating surface normal and perpendicular to the grating lines, the diffracted beams exit the grating at an angle θ' determined by the grating equation:

Equation 5: Grating Equation
Here, n is the order of diffraction, λ is the diffracted wavelength, and d is the grating constant (the distance between grooves). For n > 0, the diffraction grating will spatially separate a polychromatic incident beam by diffracting the beam at an angle θ', which is wavelength dependent. Once the spectral content of the gain chip is spatially separated, a variety of means can be employed to selectively reflect light with a specific wavelength back into the gain medium.
One of the simplest approaches is to use a Littrow configuration where the diffraction grating is oriented so that the first-order diffraction is retroreflected back into the gain chip [i.e., θ = θ' in Eq. (5) above]:

Equation 6: Grating Equation, Littrow Configuration
The laser output power can be taken from the zero-order reflection of the grating, which is often done because it minimizes the number of optical elements required to construct the ECL (a collimating lens and the diffraction grating).
Wavelength tuning is accomplished by rotating the diffraction grating, which varies the wavelength of light that is reflected back into the waveguide. When the diffraction grating (grating constant), collimation lens, and cavity length are chosen so that only one longitudinal mode is reflected back to the gain chip within the acceptance angle of the waveguide, the external cavity laser will produce a single frequency laser spectrum. Note that the selection of collimation lens is important because it affects the amount of grating area that is illuminated as well as the focused spot size coupling back into the semiconductor gain chip. One of the disadvantages of this configuration is that the angle of the zero-order output beam changes as the wavelength is tuned. However, this problem can be avoided if the output of the ECL is emitted from the normal facet of the SAF gain chip. In this configuration the reflectance of the SAF normal facet is typically reduced to R ~ 10% (as in Thorlabs' SAF Gain Chips) and a grating is chosen that efficiently diffracts light into the order being used to create the ECL to maximize the output power of the laser.
Figure 5: Littrow External Cavity Laser
Another common ECL implementation is the Littman-Metcalf configuration, which uses an additional adjustable mirror to select the feedback wavelength. [5] The double-pass of the diffraction grating at an increased angle of incidence results in an external cavity that has better wavelength selectivity. As a result, the output beam of a Littman-Metcalf ECL typically has a narrower linewidth than a similar laser built using a Littrow configuration. In the Littman-Metcalf configuration, the output beam of the laser is typically the zero-order reflection from the diffraction grating, since the propagation direction remains fixed as the wavelength is tuned. In this case, the SAF normal facet is coated with a high-reflection (HR) coating, typically >90%, in order to minimize the losses in the ECL, which maximizes the output power. Since Thorlabs' SAF Gain Chips feature a reflectivity of either 10% or 20% on their normal facets, they are not suitable for use in this application.
Figure 6: Littman-Metcalf External Cavity Laser
For some applications it may still be desirable to use the normal facet of the SAF chip as the output coupler of the laser. For these applications, a low reflection coating on the normal facet of the SAF gain chip would be required in order to maximize the output power of the laser.
One drawback to the Littman-Metcalf design is that the internal losses are higher than in the Littrow configuration, and hence, the output power of the laser is typically lower. The increase in internal losses are mainly due to the loss of the zero-order beam reflected from the tuning mirror and the increased loss due to the decrease in the efficiency of the grating when used to reflect light at a large angle of incidence.
The innovative design of an SAF gain chip is ideal for use in external cavity lasers because it virtually eliminates the unwanted feedback from the intracavity facet of the gain chip. Thorlabs offers SAF chips with both low- and high-reflectivity coatings on the normal facet in order to support a wide variety of external cavity configurations. For information on custom coatings that optimize the performance of a particular external cavity laser configuration, please contact Tech Support.
1) C. H. Henry, "Theory of the Linewidth of Semiconductor Lasers" IEEE J. of Quantum electron, QE-18, 259 (1982).
2) R. Wyatt, K. H. Cameron and M. R. Matthews, "Tunable Narrow Line External Cavity Lasers for Coherent Optical Communication Systems", Br. Telecom. Technol. J. 3, 5 (1985).
3) P. Zorabedian, "Tunable External Cavity Semiconductor Lasers." Tunable Lasers Handbood, Ed. F. J. Duarte. New York, Academic, 1995. Chapter 8.
4) P. J. S. Heim, Z. F. Fan, S. -H. Cho, K. Nam, M. Dagenais, F. G. Johnson and R. Leavitt, "Single-angled-facet Laser Diode for Widely Tunable External Cavity Semiconductor Lasers with High Spectral Purity", Electron. Lett., 33, 1387 (1997).
5) M. G. Littman and H. J. Metcalf, "Spectrally narrow pulsed dye laser without beam expander," App. Opt. 17, 2224 (1978).
Safe practices and proper usage of safety equipment should be taken into consideration when operating lasers. The eye is susceptible to injury, even from very low levels of laser light. Thorlabs offers a range of laser safety accessories that can be used to reduce the risk of accidents or injuries. Laser emission in the visible and near infrared spectral ranges has the greatest potential for retinal injury, as the cornea and lens are transparent to those wavelengths, and the lens can focus the laser energy onto the retina.
Lasers are categorized into different classes according to their ability to cause eye and other damage. The International Electrotechnical Commission (IEC) is a global organization that prepares and publishes international standards for all electrical, electronic, and related technologies. The IEC document 60825-1 outlines the safety of laser products. A description of each class of laser is given below:
| Class | Description | Warning Label |
|---|---|---|
| 1 | This class of laser is safe under all conditions of normal use, including use with optical instruments for intrabeam viewing. Lasers in this class do not emit radiation at levels that may cause injury during normal operation, and therefore the maximum permissible exposure (MPE) cannot be exceeded. Class 1 lasers can also include enclosed, high-power lasers where exposure to the radiation is not possible without opening or shutting down the laser. | ![]() |
| 1M | Class 1M lasers are safe except when used in conjunction with optical components such as telescopes and microscopes. Lasers belonging to this class emit large-diameter or divergent beams, and the MPE cannot normally be exceeded unless focusing or imaging optics are used to narrow the beam. However, if the beam is refocused, the hazard may be increased and the class may be changed accordingly. | ![]() |
| 2 | Class 2 lasers, which are limited to 1 mW of visible continuous-wave radiation, are safe because the blink reflex will limit the exposure in the eye to 0.25 seconds. This category only applies to visible radiation (400 - 700 nm). | ![]() |
| 2M | Because of the blink reflex, this class of laser is classified as safe as long as the beam is not viewed through optical instruments. This laser class also applies to larger-diameter or diverging laser beams. | ![]() |
| 3R | Lasers in this class are considered safe as long as they are handled with restricted beam viewing. The MPE can be exceeded with this class of laser, however, this presents a low risk level to injury. Visible, continuous-wave lasers are limited to 5 mW of output power in this class. | ![]() |
| 3B | Class 3B lasers are hazardous to the eye if exposed directly. However, diffuse reflections are not harmful. Safe handling of devices in this class includes wearing protective eyewear where direct viewing of the laser beam may occur. In addition, laser safety signs lightboxes should be used with lasers that require a safety interlock so that the laser cannot be used without the safety light turning on. Class-3B lasers must be equipped with a key switch and a safety interlock. | ![]() |
| 4 | This class of laser may cause damage to the skin, and also to the eye, even from the viewing of diffuse reflections. These hazards may also apply to indirect or non-specular reflections of the beam, even from apparently matte surfaces. Great care must be taken when handling these lasers. They also represent a fire risk, because they may ignite combustible material. Class 4 lasers must be equipped with a key switch and a safety interlock. | ![]() |
| All class 2 lasers (and higher) must display, in addition to the corresponding sign above, this triangular warning sign | ![]() | |
Thorlabs' Littman configuration kits, which share many components with the Littrow kits, are available with a 770, 1050, 1310, 1550, or 1900 nm gain element. The design difference between Littman and Littrow configurations is the wavelength selection mechanism. Unlike the Littrow configuration, the Littman configuration has a fixed grating angle. Light diffracted from the grating is then reflected off of a mirror, diffracted a second time by the grating, and coupled back in to the gain element. Since light undergoes diffraction twice in this configuration, this laser cavity configuration typically offers narrower linewidths while sacrificing power and tuning range.
The 770 nm Littman configuration kit is a free-space design, while the others are fiber coupled. Note that the fiber output from the TLK-L1050M and TLK-L1900M should be mated to a fiber isolator for specified performance as the half butterfly gain chip does not have an integrated isolator. Please contact us for details.
Part Number |
Description |
Price |
Availability |
|---|---|---|---|
TLK-L780M |
Tunable Laser Kit, 770 nm, Littman Configuration, Free Space |
$7,590.00 |
3-5 Days |
TLK-L1050M |
Customer Inspired!Tunable Laser Kit, 1050 nm, Littman Configuration, FC/APC |
$9,350.00 |
Lead Time |
TLK-L1300M |
Tunable Laser Kit, 1310 nm, Littman Configuration, FC/APC |
$8,690.00 |
Today |
TLK-L1550M |
Tunable Laser Kit, 1550 nm, Littman Configuration, FC/APC |
$8,690.00 |
Today |
TLK-L1900M |
Customer Inspired!Tunable Laser Kit, 1900 nm, Littman Configuration, FC/APC |
$10,450.00 |
Today |
The standard Littrow kits are available with 1220, 1310, 1550, or 1950 nm center wavelengths. The fiber-coupled single angle facet (SAF) gain chips in them provide excellent tuning ranges and output powers. The cavities are configured as shown in the image to the right such that the light emitted from the gain element is collimated by the lens and then diffracted by a grating. Diffracted light that is coupled back into the gain element provides wavelength selection based on the angle of the grating, thus making the cavity wavelength tunable. Note that the TLK-L1950R should be used with an optical isolator for specified performance. Please contact us for details.
Part Number |
Description |
Price |
Availability |
|---|---|---|---|
TLK-L1220R |
Customer Inspired!Tunable Laser Kit, 1220 nm, Littrow Configuration, FC/APC |
$12,100.00 |
Today |
TLK-L1300R |
Tunable Laser Kit, 1310 nm, Littrow Configuration, FC/APC |
$8,250.00 |
Today |
TLK-L1550R |
Tunable Laser Kit, 1550 nm, Littrow Configuration, FC/APC |
$8,250.00 |
Today |
TLK-L1950R |
Customer Inspired!Tunable Laser Kit, 1950 nm, Littrow Configuration, FC/APC |
$10,450.00 |
Today |