SAF Gain Chips, 1450 nm Center Wavelength

  • InP Gain Chip on Submount or Submount with Heatsink
  • Ultra-Low Reflectance at Angled Facet
  • Custom Coatings Available

Actual Size Compared
to US One Cent Coin


Chip on Submount


Chip on Submount
with Heatsink

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Operating Current (IOP) - 500 mA 800 mA
Center Wavelength 1420 nm 1450 nm 1480 nm
ASE Power @ IOP 10 mW 20 mW -
Peak Gain @ IOP - 33 dB -
Optical Bandwidth 80 nm 95 nm -
Gain Ripple (RMS) @ IOP
Res. BW = 0.1 nm
- 0.3 dB 1 dB
Angled Facet Reflectivity - 0.005% 0.01%
Normal Facet Reflectivity - 90% -
Forward Voltage - 1.4 V 1.8 V
Chip Length - 1.5 mm -
Waveguide Refractive Index - 3.2 -
Lateral Beam Exit Angle - 26.5° -
Transverse Beam
Divergence (FWHM)
- 30° -
Lateral Beam
Divergence (FWHM)
- 15° -


  • Broad Tuning Range
  • High Output Power
  • Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
  • Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
  • Gain Medium for Widely Tunable External Cavity Semiconductor Lasers

Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.

Our 1450 nm SAF gain chip is available in two configurations. The SAF1093C chip is offered on a submount, while the SAF1093H is provided on the same submount with a heatsink and connected cathode and anode leads.

Other SAF Gain Chips
1320 or 1550 nm Chip in Half Butterfly
1220 nm Chip on Submount or Heatsink
1320 nm Chip on Submount or Heatsink
1550 or 1590 nm Chip on Submount or Heatsink
1650 nm Chip on Submount or Heatsink

Sample Results of an SAF1093 Used in a Basic Littrow Configuration

SAF1093 Performance when used in a basic littrow configuration

For more information on using a SAF gain chip in an external cavity laser see the online External Cavity Diode Laser Tutorial.

SAF, Gain Chip
Click to Enlarge

Diagram of the Anode and Cathode Pins of the SAF1093C
SAF, Gain Chip
Click to Enlarge

Diagram of the Anode and Cathode Pins of the SAF1093H

Posted Comments:
barry.luther-davies  (posted 2015-04-14 11:47:27.227)
What are the polarisation properties of these chips? Does not seem to be specified anywhere.
jlow  (posted 2015-04-16 08:39:46.0)
Response from Jeremy at Thorlabs: The SAF chips are TE-polarized. Typically, the polarization extinction ratio is >18dB.
jjurado  (posted 2011-08-08 11:01:00.0)
Response from Javier at Thorlabs to clarafly: The width and height of the active region of the SAF1093 chip is ~3um and ~1um, respectively.
clarafly  (posted 2011-08-05 13:58:00.0)
Can you provide the information about the width and height of the active region in SAF1093x? Thanks.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
SAF1093C Support Documentation
SAF1093CCWL = 1450 nm, Single Angle Facet Gain Chip on Submount
SAF1093H Support Documentation
SAF1093HCWL = 1450 nm, Single Angle Facet Gain Chip on Submount with Heatsink