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SAF Gain Chips, 1220 nm Center Wavelength


  • InP Gain Chip on Submount or Submount with Heatsink
  • Ultra-Low Reflectance at Angled Facet
  • Custom Coatings Available

Actual Size Compared
to US One Cent Coin

SAF1145C

Chip on Submount

SAF1145H

Chip on Submount
with Heatsink

Related Items


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ParameterMinTypMax
Operating Current - 300 mA 500 mA
Center Wavelength 1190 nm 1220 nm 1250 nm
ASE Power @ IOP 0.5 mW 1.0 mW -
Peak Gain @ IOP - 20 dB -
Optical Bandwidth 60 nm 80 nm -
Gain Ripple (rms) @ IOP
Res. BW = 0.1 nm
- 0.35 dB 1 dB
Angled Facet Reflectivity - 0.005% 0.01%
Normal Facet Reflectivity - 10% -
Forward Voltage - 1.4 V 1.8 V
Chip Length - 1.0 mm -
Waveguide Refractive Index - 3.2 -
Lateral Beam Exit Angle - 26.5° -
Transverse Beam
Divergence (FWHM)
- 30° -
Lateral Beam
Divergence (FWHM)
- 13° -

Features

  • Broad Tuning Range
  • High Output Power
  • Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
  • Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
  • Gain Medium for Widely Tunable External Cavity Semiconductor Lasers

Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.

Our 1220 nm SAF gain chip is available two configurations. The SAF1145C chip is offered on a submount, while the SAF1145H is provided on the same submount with a heatsink and connected cathode and anode leads.

Other SAF Gain Chips
1320 or 1550 nm Chip in Half Butterfly
1320 nm Chip on Submount or Heatsink
1450 nm Chip on Submount or Heatsink
1550 or 1590 nm Chip on Submount or Heatsink
1650 nm Chip on Submount or Heatsink

Sample Results of an SAF1145 Used in a Basic Littman-Metcalf Configuration

SAF1145 Performance in a Littman Metcalf Cavity

For more information on using a SAF gain chip in an external cavity laser see the online External Cavity Diode Laser Tutorial.

SAF, Gain Chip
Click to Enlarge

Diagram of the Anode and Cathode Pins of the SAF1145C
SAF, Gain Chip
Click to Enlarge

Diagram of the Anode and Cathode Pins of the SAF1145H

Posted Comments:
pinlong  (posted 2013-08-14 10:37:48.443)
Is SAF1145H has two pins output for connecting electrical driver?
jlow  (posted 2013-08-14 13:28:00.0)
Response from Jeremy at Thorlabs: The SAF1145H does have two leads for the anode and cathode. You can see the drawing for this at http://www.thorlabs.com/Thorcat/20200/SAF1145H-AutoCADPDF.pdf.
Based on your currency / country selection, your order will ship from Newton, New Jersey  
+1 Qty Docs Part Number - Universal Price Available
SAF1145C Support Documentation
SAF1145CCWL = 1220 nm, Single Angle Facet Gain Chip on Submount
$670.28
Today
SAF1145H Support Documentation
SAF1145HCWL = 1220 nm, Single Angle Facet Gain Chip on Submount with Heatsink
$670.28
5-8 Days
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