SAF Gain Chips, 1220 nm Center Wavelength

Features

• Broad Tuning Range
• High Output Power
• Ultra-Low Angled Facet Reflectance: 0.005% (Typ)
• Gain Medium for Narrow Linewidth Fiber Bragg Grating Lasers
• Gain Medium for Widely Tunable External Cavity Semiconductor Lasers

Single Angled Facet (SAF) gain chips use a geometric technique to further reduce the reflection on one end of the chip by curving the ridge waveguide so that it is not normally incident to the chip facet. This, in combination with an AR coating on that facet, virtually eliminates back reflections that can create unwanted feedback into the laser cavity. As a result, SAF gain chips are superior to standard gain chips when used in Extended Cavity Lasers (ECLs), particularly tunable ECLs, since any residual reflection from the AR-coated Fabry-Perot (FP) gain chip facet often limits the stability, output power, and spectral quality of the laser.

Our 1220 nm SAF gain chip is available two configurations. The SAF1145C chip is offered on a submount, while the SAF1145H is provided on the same submount with a heatsink and connected cathode and anode leads.

Sample Results of an SAF1145 Used in a Basic Littman-Metcalf Configuration

For more information on using a SAF gain chip in an external cavity laser see the online External Cavity Diode Laser Tutorial.